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HL: Fachverband Halbleiterphysik

HL 38: Materials and Devices for Quantum Technology II

Thursday, March 12, 2026, 09:30–12:45, POT/0051

09:30 HL 38.1 Shadow masks for all-in-situ fabrication of InAs nanowire Josephson junctions — •Christian Schäfer, Lennart Grosch, Yurii Kutovyi, Nils von den Driesch, Thomas Schäpers, and Alexander Pawlis
09:45 HL 38.2 Semiconductor−superconductor membranes for nanoelectronic devices — •Thies Jansen, Christian Reichl, and Thomas Sand Jespersen
10:00 HL 38.3 Secondary electron detector for deterministic single ion implantation — •Priyal Dadhich, Nico Klingner, and Gregor Hlawacek
10:15 HL 38.4 Spin-orbit-enabled realization of arbitrary two-qubit gates on moving spins — •David Fernández-Fernández, Yuta Matsumoto, Lieven M.K. Vandersypen, Gloria Platero, and Stefano Bosco
10:30 HL 38.5 Topological Superconductivity in the Presence of Contact Potentials — •Leonard Kaufhold
10:45 HL 38.6 Hexagonal Germanium Nanowires as a Spin Qubit Platform — •Anirban Das, Baksa Kolok, Daniel Varjas, and Andras Palyi
  11:00 15 min. break
11:15 HL 38.7 Low-Loss LNOI PIC Components for Quantum Interference Applications — •Mohammad Malik, Simon Palitza, and Carsten Schuck
11:30 HL 38.8 Scalable and individual control of Si qubits via magnetic skyrmions — •Leander Reascos, Raluca Boltje, Kai Litzius, Felix Büttner, and Mónica Benito
11:45 HL 38.9 Strain modulation in Germanium: an overview for quantum applications — •Meera None, Ignatii Zaitsev, Davide Spirito, Patricio Farrell, Christian Merdon, Yiannis Hadjimichale, Daniel Fritsch, Marvin Hartwig Zoellner, and Costanza Lucia Manganelli
12:00 HL 38.10 Optical probing of strain fields in isotopically pure Si-28 using donor-bound excitons — •Nico Eggeling, Phillip Külper, N.V. Abrosimov, Jens Hübner, and Michael Oestreich
12:15 HL 38.11 Development of heavy noble gas field ion sources using an iridium coated single crystalline tungsten emitter — •Amina Zid, Gregor Hlawacek, Nico Klingner, Arnaud Houel, and Anne Delobbe
12:30 HL 38.12 Finding the kinked propagation of the I3 defect in hexagonal silicon using a machine-learned potential — •Jolijn Dellevoet
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