Dresden 2026 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 40: Oxide Semiconductors: Transport and Spectroscopy

HL 40.7: Vortrag

Donnerstag, 12. März 2026, 11:15–11:30, POT/0251

MESFETs based on α-(AlxGa1-x)2O3 thin films — •Sebastian Köpp, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann — Leipzig University, Leipzig, Germany

We present the electrical properties and key parameters of metal-semiconductor field effect transistors (MESFET) on α-(AlxGa1-x)2O3. The functional thin films were grown by pulsed laser deposition. The transistors were investigated in dependence on the Al content up to x=0.1. The devices exhibit an electrical breakdown field larger than that of comparable transistors on binary α-Ga2O3, demonstrating the advantages of the (AlxGa1-x)2O3 alloy system.
With its ultra-wide bandgap of 5.3 eV to 5.6 eV [1,2] and a high predicted breakdown field of 10 MV/cm [3], α-Ga2O3 is a promising material for high-power devices, as well as deep-UV photodetectors. α-Ga2O3, being isostructural to aluminium oxide, allows for heteroepitaxial growth on cost-efficient sapphire substrates, and also opens up the option of α-(AlxGa1-x)2O3 alloys [4], with even higher dielectrical breakdown field than binary Ga2O3.

[1] A. Segura et al., Phys. Rev. Materials 1, 024604 (2017)
[2] E. Ahmadi et al., J. Appl. Phys. 126, 160901 (2019)
[3] M. Biswas and H. Nishinaka, APL Mater. 10, 060701 (2022)
[4] J. Steele et al., APL Mater. 12, 041113 (2024)

Keywords: Aluminium oxide; Gallium oxide; Transistor; MESFET; device