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HL: Fachverband Halbleiterphysik

HL 40: Oxide Semiconductors: Transport and Spectroscopy

HL 40.8: Vortrag

Donnerstag, 12. März 2026, 11:30–11:45, POT/0251

Group-III doping study of p-type oxide tin monoxide — •Nicola Gutmann, Georg Hoffmann, Aidan Campbell, and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany.

The use of transparent conducting oxides has so far been limited to n-type materials, hindering the development of transparent oxide-based pn-junctions and CMOS devices. In contrast, SnO shows natural p-type conduction with reported hole mobilities up to 21 cm²/Vs [1] and well-performing p-type transistors demonstrated.

Adjustment of hole concentration by doping with Ga, Na, K and Y has been demonstrated [2]. Al is theoretically predicted to be an n-type dopant [3], which would enable SnO-based pn-homojunctions.

In this work, we comparatively explore doping of suboxide molecular beam epitaxy grown SnO by the group-III elements Al, Ga and In.

[1] M. Minohara et al., J. Phys. Chem. C, vol. 124, no. 2, pp. 1755-1760 (2020).

[2] S. Chae et al., APL Materials, vol. 13, no. 10, p. 101114 (2025).

[3] M. Graužinyte et al., Phys. Rev. Materials, vol. 2, no. 10, p. 104604 (2018).

Keywords: p-type; doping; oxide semiconductor; SnO; tin monoxide