HL 42: Nitrides III – Emerging thin films and electrochemistry
Donnerstag, 12. März 2026, 11:15–12:45, POT/0006
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11:15 |
HL 42.1 |
Hauptvortrag:
Transition Metal Nitride Semiconductors for Photoelectrochemical Energy Conversion — •Verena Streibel, Laura I. Wagner, Elise Sirotti, David A. Egger, and Ian D. Sharp
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11:45 |
HL 42.2 |
Analysis of the interface properties of cubic nitride thin films grown on 3C-SiC/Si templates using electrochemical impedance spectroscopy — •Hannes Hergert, Mario F. Zscherp, Silas A. Jentsch, Jörg Schörmann, Sangam Chatterjee, Peter J. Klar, and Matthias T. Elm
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12:00 |
HL 42.3 |
Investigating Charge Transport Limitations in LaTiO2N Thin Films for Photoelectrochemical Water Splitting — •Oliver Brune, Gabriel Grötzner, Katarina S. Flashar, Saswati Santra, Ian D. Sharp, and Verena Streibel
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12:15 |
HL 42.4 |
Epitaxial YbN thin films grown by nitrogen plasma-assisted molecular beam epitaxy — Yitong Chen, •Anna Meléndez Sans, Shin-ichi Kimura, Liu Hao Tjeng, and Simone Altendorf
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12:30 |
HL 42.5 |
Novel TbTa(O,N)3 perovskite oxynitride for photoelectrochemical energy conversion — •Aleksandr Kochergov, Gabriel Grötzner, Oliver Brune, Frans Munnik, Saswati Santra, Verena Streibel, and Ian D. Sharp
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