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HL: Fachverband Halbleiterphysik
HL 45: Perovskite and Photovoltaics: Spectroscopy
HL 45.3: Vortrag
Donnerstag, 12. März 2026, 15:30–15:45, POT/0006
Investigation on the efficiency limiting processes of 3C-SiC photoelectrodes using intensity modulated techniques. — •Marius Wasem1,2, Mario F. Zscherp1,2, Silas A. Jentsch1,2, Jörg Schörmann1,2, Sangam Chatterjee1,2, and Matthias T. Elm1,2 — 1Center for Materials Research, Heinrich-Buff-Ring 16, 35392 Giessen — 2Institute of Experimental Physics I, Heinrich-Buff-Ring 16, 35392 Giessen
Cubic silicon carbide (3C-SiC) is a compelling photoelectrode for photoelectrochemical water splitting due to its near-ideal band gap energy and excellent chemical stability. Here, we present the characterization of the photoelectrochemical response of epitaxially grown n- and p-type 3C-SiC using different electrochemical methods. A pH neutral phosphate buffer solution was used as electrolyte. The suitable operating conditions, such as potential range and light intensity, were determined using chopped light voltammetry. Insights of the charge carrier dynamics were gained by combining electrochemical impedance spectroscopy (EIS), intensity-modulated photocurrent spectroscopy (IMPS) and intensity-modulated photovoltage spectroscopy (IMVS). While EIS is a common and widely used method, the latter two methods are rarely discussed in the photoelectrochemical community. Here we show how a combination of all three methods enables the differentiation and quantification of key processes (recombination processes, surface effects, charge carrier lifetime) to validate the efficiency of 3C-SiC photoelectrodes.
Keywords: photoelectrochemistry; charge carrier dynamics; electrochemical impedance spectroscopy; intensity modulated spectroscopy; cubic SiC