Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Heterostructures, Interfaces and Surfaces: Fabrication and Structure
HL 48.3: Vortrag
Donnerstag, 12. März 2026, 15:30–15:45, POT/0251
GaPN growth on As-Modified Si(100) for defect-reduced heteroepitaxy — •Hitha Haridas1, Kai Daniel Hanke1, Agnieszka Paszuk1,2, and Thomas Hannappel1 — 1Technische Universität Ilmenau, Fundamentals of Energy Materials, Ilmenau,Germany — 2BMFTR Junior Research Group PARASOL, Technische Universität Ilmenau, Germany
The Monolithic integration of III-V semiconductors with Si(100) offers a promising route toward high-efficiency,low-cost optoelectronic devices. Among these materials, GaPN is a promising candidate for III-V/Si integration because it can be grown lattice-matched to silicon, thereby minimizing strain and reducing the formation of misfit dislocations. However, structural defects generated during the earliest stages of growth can propagate into subsequent epitaxial layers, ultimately limiting device performance. In this study, we investigate the nucleation and early-stage growth behavior of GaPN on As-modified Si(100) surfaces by combining ex situ surface morphology analysis,electron channeling contrast imaging, and in situ optical spectroscopy.This integrated approach allows us to systematically evaluate how variations in the initial growth conditions influence defect formation. The insights gained provide broader guidance for improving interface quality and advancing III-V/Si heteroepitaxy through more precise control over the initial growth phases.
Keywords: III-V on Si; Nitrides; Teritiary material; Epitaxy; Defects