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HL: Fachverband Halbleiterphysik
HL 48: Heterostructures, Interfaces and Surfaces: Fabrication and Structure
HL 48.5: Vortrag
Donnerstag, 12. März 2026, 16:15–16:30, POT/0251
Ultra-high vacuum exfoliation method for the preparation of large-area single layer TMDC films — •Zhiying Dan1, Ronak Sarmasti Emami1, Antonija Antonija Grubisic-Cabo1, Petra Rudolf1, Deepnarayan Biswas2, and Tien-Lin Lee2 — 1Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands — 2Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK
Two-dimensional transition metal dichalcogenides (2D TMDCs) are promising candidates for next-generation electronic, optical, and spintronic devices. While mechanical exfoliation yields high-quality 2D flakes, their lateral size is typically limited to tens of micrometers. Here, we report the preparation of 2D WS2 and WSe2 using a recently developed kinetic in situ single-layer synthesis (KISS) method, performed in ultra-high vacuum and tailored for surface science studies. We examine how substrate choice and chalcogen species affect film size and quality using X-ray photoelectron spectroscopy, low-energy electron diffraction, atomic force microscopy, and X-ray standing waves (XSW). Our results show that the quality of the bulk TMDC crystal is crucial for successful KISS exfoliation. Moreover, preliminary XSW data suggest that KISS does not degrade the underlying substrate, highlighting its potential as a non-destructive approach for 2D material synthesis.
Keywords: 2D materials; Kiss exfoliation; UHV; XPS; XSW