Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Heterostructures, Interfaces and Surfaces: Fabrication and Structure
HL 48.8: Vortrag
Donnerstag, 12. März 2026, 17:00–17:15, POT/0251
Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si — •Daniel Dick1,2,3,4, Florian Fuchs1,2,3, Sibylle Gemming2,4, and Jörg Schuster1,2,3 — 1Center for Micro- and Nanotechnology, TU Chemnitz, Germany — 2Center for Materials, Architecture and Integration of Nanomembranes, TU Chemnitz, Germany — 3Fraunhofer Institute for Electronic Nanosystems (ENAS), Chemnitz, Germany — 4Institute of Physics, TU Chemnitz, Germany
When the size of random alloys is reduced, local fluctuations of alloy composition become more influential. Using extended Hückel theory, we study the semiconductor alloy SiGe sandwiched between Si due to its relevance in semiconductor devices. We evaluate the effects of the alloy composition, layer thickness, and local fluctuations of the Ge concentration on band alignment and the band gap. Results are compared to the finite quantum well model. This model captures the essenial physics and can act as a computationally faster surrogate model.
Keywords: semiconductor alloy; SiGe; quantum confinement; electronic structure theory; extended Hückel theory