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HL: Fachverband Halbleiterphysik

HL 49: Quantum Emitters in 2D Semiconductors

HL 49.2: Vortrag

Donnerstag, 12. März 2026, 16:45–17:00, POT/0081

Spin Dynamics of Quantum Sensors Based on Hexagonal Boron Nitride — •Paul Konrad¹, Andreas Sperlich¹, Igor Aharonovich², and Vladimir Dyakonov¹ — ¹Experimental Physics 6, Julius-Maximilians-Universität Würzburg, 97074 Würzburg — ²School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia

Colour centres in solid-state materials show great potential in quantum information technology and sensing applications. The spin triplet system of the lately discovered negatively charged boron vacancy (V_B⁻) in hexagonal boron nitride (hBN) can be exploited in terms of its application as temperature, magnetic field, and pressure sensor.^[1] Increasing the sensitivity of these nano-scale sensors is a crucial step towards application and requires not only controlled generation^[2] but deep knowledge about the dynamics of the system. This includes predicted but experimentally hardly accessible intermediate states.

In this study, we achieve a direct measurement of a 24.0(3) ns relaxation time from the dark intermediate state to the ground state at room temperature, which approximately doubles at low temperatures. These findings are corroborated by detailed simulations of populations. Accounting for this relaxation considerably enhances spin manipulation efficiency, allowing substantial optimization of the quantum sensor’s sensitivity based on boron vacancies.^[3]
[1] Gottscholl et al., Nat. Commun., 12, 4480 (2021).
[2] Patra et al., Adv. Funct. Mater. e17851 (2025).
[3] Konrad et al., arXiv preprint arXiv:2503.22815 (2025).

Keywords: intermediate state; negatively charged boron vacancy; quantum sensors; hexagonal boron nitride; ODMR