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HL: Fachverband Halbleiterphysik
HL 51: 2D Materials: Stacking and heterostructures (joint session O/HL/TT)
HL 51.7: Vortrag
Freitag, 13. März 2026, 11:00–11:15, HSZ/0401
μ-ARPES study on the fine electronic structure of misfit layer compound (PbSe)1.16(TiSe2)2 — •haruki muramatsu1, natsuki mitsuishi2,3, teppei ueno4, kenichi ozawa5, kaya kobayashi4,6, and kyoko ishizaka1,2 — 1Dept. of Appl. Phys. & QPEC, Univ. of Tokyo — 2CEMS, RIKEN — 3Grad. Sch. Sci., Nagoya Univ. — 4Dept. of Physics, Okayama Univ. — 5KEK-PF — 6RIES, Hokkaido Univ.
Misfit layered compounds have been attracting significant attention due to their lattice mismatches and resultant two-dimensional electronic structures reminiscent of van der Waals heterostructures. One such compound, (PbSe)1.16(TiSe2)2, consists of alternating stacking of PbSe monolayers (NaCl-type, four-fold symmetry) and TiSe2 bilayers (CdI2-type, three-fold symmetry). To elucidate its electronic structure, we performed μ-ARPES measurements by carefully distinguishing the cleavage surface terminations. In the presentation, we will discuss the novel electronic states reflecting the natural incommensurate heterostructure as well as charge density wave in the buried TiSe2 bilayer.
Keywords: transition metal dichalcogenide; van del Waals heterostructure; misfit layer compound; ARPES; electronic band structure