Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: 2D Materials: Stacking and heterostructures (joint session O/HL/TT)
HL 51.9: Vortrag
Freitag, 13. März 2026, 11:30–11:45, HSZ/0401
band structure and charge density wave in a natural van der Waals heterostructure 4Hb-TaSe2 — •fumihiko kimura1, tomoki maeda2, natsuki mitsuishi3,4, kazuki okada2, takuya nomoto5, kenichi ozawa6, masahiro naritsuka3, tetsuo hanaguri3, shunsuke kitou7, yuiga nakamura8, taka-hisa arima3,7, takao sasagawa2, and kyoko ishizaka1,3 — 1Quantum-Phase Electronics Center & Department of Applied Physics, The University of Tokyo — 2Laboratory for Materials and Structures, Science Tokyo — 3RIKEN CEMS — 4Graduate School of Science, Nagoya University — 5Department of Physics, Tokyo Metropolitan University — 6Institute of Materials Structure Science, High energy Accelerator Research Organization (KEK) — 7Department of Advanced Materials Science, The University of Tokyo — 8Japan Synchrotron Radiation Research Institute (JASRI), SPring-8
4Hb-TaSe2 is a natural van der Waals heterostructure charge density wave (CDW) material consisting of alternative stacking of monolayer 1T-TaSe2 (Mott insulator with Star-of-David CDW) and monolayer 2H-TaSe2 (superconductor with 3 by 3 CDW). Although transport measurements have suggested the existence of multiple CDWs, the details of the CDW and electronic structures remain unclear. In this study, we directly observed the electronic structure of 4Hb-TaSe2 by micro-focused angle-resolved photoemission spectroscopy with careful selection of the surface terminations. We discuss the temperature dependent electronic structure with comparison to the CDW structures obtained by scanning tunneling microscopy and X-ray diffraction.
Keywords: transition metal dichalcogenide; van der Waals heterostructure; charge density wave; ARPES