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HL: Fachverband Halbleiterphysik
HL 53: Organic Semiconductors: Carrier Dynamics
HL 53.3: Vortrag
Freitag, 13. März 2026, 10:15–10:30, POT/0051
Simulation of Coulomb Glass Behavior in Organic Semiconductor Devices at high carrier densities — •Magdalena Dörfler1, Heinz Bässler2, Anna Köhler1,2, and Harald Oberhofer3 — 1Soft Matter Optoelectronics and Bayerisches Polymerinstitut (BPI), Experimental physics II, University of Bayreuth, Universitätsstr. 30, 95448 Bayreuth, Germany — 2Bayreuth Institute of Macromolecular Research (BIMF), University of Bayreuth, Universitätsstr. 30, 95448 Bayreuth, Germany — 3Chair for Theoretical Physics VII and Bavarian Center for Battery Technologies, University of Bayreuth, Universitätsstr. 30, 95448 Bayreuth, Germany
Recent advances in organic transistors (OFETs, EGOFETs, OECTs) enable device operation at high charge carrier densities where Coulomb interactions between carriers become significant.
Using Kinetic Monte Carlo simulations, we investigate carrier-carrier Coulomb interactions in OFET-like structures. Comparing simulations with and without these interactions reveals reduced carrier mobility and increased activation energy when interactions are included, with effects increasing for higher carrier densities.
Our results indicate a transition to correlated transport with a Coulomb gap in a dynamic density of states. The system exhibits Coulomb glass behavior, where the activation energy reflects structural reorganization of the carrier ensemble.
Notably, the Coulomb gap appears at ambient temperature and does not require variable-range hopping, unlike to the situation in electron liquids and inorganic semiconductors.
Keywords: Coulomb glass; Correlated transport; High carrier density; Dynamic Density of States; Organic transistors