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HL: Fachverband Halbleiterphysik
HL 54: 2D Materials IX – Photonic properties and devices
HL 54.11: Vortrag
Freitag, 13. März 2026, 12:15–12:30, POT/0081
Optical Gain in Lasers Based on Two-Dimensional TMD Semiconductors — Tommy Schulz1, •Daniel Erben1, Alexander Steinhoff2, Weng Chow3, and Frank Jahnke1 — 1Institute for Theoretical Physics and Bremen Center for Computational Materials Science, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany — 2Institute for Physics, Faculty V, Carl von Ossietzky University Oldenburg, 26129 Oldenburg, Germany — 3Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
We present a direct comparison of the optical gain in InGaAs quantum wells (QWs) and transition-metal dichalcogenide (TMD) monolayers on SiO2 and encapsulated in hBN. A central objective of this work is to theoretically quantify the gain and to identify its microscopic origin. As a result, we find a substantially larger magnitude of the gain in TMDs - especially in WS2 - and comparable transparency carrier densities in both systems. The enhanced interband Coulomb interaction in TMDs provides this superior gain performance, although the valley-rich conduction band makes sustaining population inversion more challenging than in InGaAs/GaAs QWs. Encapsulating WS2 in hBN - a common approach to improve optical quality - proves advantageous, as it reduces carrier drain into side valleys, which lowers the transparency carrier density compared with WS2/SiO2. Lastly, we investigate the Henry factor (α), which governs key laser properties such as linewidth behaviour. InGaAs QWs exhibit large α values near transparency, hBN-encapsulated WS2 shows weakly negative values - an indication towards more favourable lasing performance.
Keywords: transition metal dichalcogenides; Coulomb interaction; many-body effects; optical gain; lasers