Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 54: 2D Materials IX – Photonic properties and devices
HL 54.4: Vortrag
Freitag, 13. März 2026, 10:15–10:30, POT/0081
Nonlinear optical characterization of oxidized thin layered MoS2 — •Henry Hübschmann1, Gerhard Berth1, Klaus Jöns1, Katharina Burgholzer2, and Alberta Bonanni2 — 1Paderborn University, Paderborn, Germany — 2Johannes Kepler University Linz, Linz, Austria
In the field of two-dimensional structures the class of transition metal dichalcogenides (TMDs) has sparked great interest in the last decades. Semiconductor materials like molybdenum disulfide (MoS2) have found many applications in photonic and optoelectronic devices [1,2]. An important characteristic is the tunability of the band structure and therefore consequently the possibility for modification of electronic and optical properties [3]. Within this work we conduct comprehensive second order nonlinear optical analysis on thermally oxidized mechanically exfoliated MoS2. In this context a layer number dependent investigation of the nonlinear response up to seven-layer configurations of AB-stacked 2H-MoS2 is performed. Here we found fingerprints of induced structural modifications identified which manifest themselves in the strength of the nonlinear response and a resulting symmetry break of centrosymmetric media.
Keywords: 2D materials; transition metal dichalcogenide; oxidized MoS2; second harmonic generation