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HL: Fachverband Halbleiterphysik

HL 56: Quantum Emitters in 3D Semiconductors

HL 56.3: Vortrag

Freitag, 13. März 2026, 11:45–12:00, POT/0006

Defect-based quantum emitters in aluminum nitride — •Annkathrin Köhler, Jan Böhmer, and Carsten Ronning — Friedrich Schiller Universität, Jena, Deutschland

Aluminum nitride (AlN) has recently gained attention as a promising platform for integrated quantum photonic applications, where single-photon emitters (SPEs) play a key role in quantum communication and on-chip information processing. Its wide bandgap, CMOS compatibility, and established role in optoelectronic technologies make AlN an attractive host for stable, room-temperature SPEs. However, the microscopic origin and controllability of its defect-based emission remain insufficiently understood, challenging the implementation in scalable quantum photonic devices. Here, we investigated the defect-related luminescence in commercially available PVD-grown AlN thin films using micro-photoluminescence spectroscopy and second-order correlation measurements. By characterizing both intrinsic defects and extrinsic impurities introduced through controlled ion irradiation, we aim to identify routes toward reproducible and deterministic creation of optically active defect centers. Ion irradiation provides a tunable method for introducing specific defect types and spatially localized emitters, potentially enabling on-demand SPE fabrication. This study supports the development of AlN as a viable wide-bandgap host for quantum light sources and outlines directions for integrating AlN-based SPEs into future photonic architectures.

Keywords: aluminum nitride (AlN); point defects; single-photon emitter; ion irradiation