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HL: Fachverband Halbleiterphysik
HL 56: Quantum Emitters in 3D Semiconductors
HL 56.5: Vortrag
Freitag, 13. März 2026, 12:15–12:30, POT/0006
Bright quantum dot light sources using monolithic microlenses on gold back-reflectors — •Moritz Langer1,2,3, Sai A Dhurjati1, Yared Zena1, Ahmad Rahimi1, Mandira Pal1, Liesa Raith1, Sandra Nestler1, Riccardo Bassoli2,3, Frank H P Fitzek3, Oliver G Schmidt4, and Caspar Hopfmann1,2,3 — 1Institute for Emerging Electronic Technologies - IFW Dresden, Dresden, Germany — 2Quantum Communication Networks Research Group, Dresden University of Technology, Germany — 3Deutsche Telekom Chair of Communication Networks, Dresden University of Technology, Germany — 4Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Germany
We present a scalable approach for fabricating bright GaAs quantum-dot photon sources by integrating QDs into broadband monolithic AlGaAs microlens arrays on gold-coated GaAs substrates. Thermally reflowed photoresist templates are transferred into AlGaAs thin films using an optimized 3D reactive-ion etching process, enabling large-area arrays with highly uniform lens geometries. Photoluminescence statistics reveal brightness enhancements of up to *200, occurring in roughly 1 out of 200 lenses, in good agreement with our developed fabrication-yield model. Finite-difference time-domain simulations predict extraction efficiencies of up to 62% for free-space collection and 37% for fiber-coupling. These results highlight the strong potential of this platform for compact, scalable entangled-photon sources in future quantum networks.
Keywords: GaAs quantum dots; quantum light sources; nanophotonics; 3D-micro engineering; monolithic microlens