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HL: Fachverband Halbleiterphysik

HL 57: Nitrides IV – Optical properties

HL 57.3: Vortrag

Freitag, 13. März 2026, 12:00–12:15, POT/0051

Near-lattice-matched AlScN/GaN heterostructures studied by spectroscopic ellipsometry and photoluminescence — •Alwin Wüthrich¹, Rajendra Kumar², Oana Malis², Rüdiger Goldhahn¹, and Martin Feneberg¹ — ¹Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — ²Department of Physics and Astronomy, Purdue University, USA

Understanding the fundamental properties of the novel ferroelectric material AlScN, such as ferroelectricity, tunable lattice constants, a wide and tunable band gap, and high piezoelectric coefficients, is crucial for its correct implementation in modern applications. Examples include processing units based on non-volatile memory and the design of infrared devices that utilize transitions between strongly confined electronic states, i.e., intersubband transitions. Here, near-lattice-matched AlScN layers (with 4--25% Sc) were grown by molecular beam epitaxy (MBE) on MBE-grown GaN layers. The samples were investigated by spectroscopic ellipsometry from the near-infrared to the far-ultraviolet range, probing infrared-active phonons and interband transitions. Additionally, the samples were studied by temperature-dependent photoluminescence, revealing luminescence from a two-dimensional electron gas.

Keywords: Nitrides; Optical properties; 2DEG; Band gap; Phonons