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HL: Fachverband Halbleiterphysik
HL 57: Nitrides IV – Optical properties
HL 57.5: Vortrag
Freitag, 13. März 2026, 12:30–12:45, POT/0051
Structural and vibrational properties of strain-free Al1−xScxN nanowires — Adriano Notarangelo1, Ileana Florea2, Philippe Vennéguès2, Aidan Campbell1, Hans Tornatzky1, Jonas Lähnemann1, Thomas Auzelle1, Lutz Geelhaar1, Oliver Brandt1, and •Philipp John1 — 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. 10117 Berlin, Germany — 2Université Côte d’Azur, CRHEA, CNRS, 06905 Sophia-Antipolis Cedex, France
The incorporation of Sc into the wurtzite crystal lattice of AlN enhances its piezoelectricity and induces ferroelectricity, making Al1−xScxN an attractive material for novel types of group-III nitride based devices. Yet, the lattice distortions giving rise to these functionalities are superimposed to distortions arising from residual strain introduced during the heteroepitaxy on lattice-mismatched substrates.
In this work, self-assembled wurtzite Al1−xScxN nanowires are grown by molecular beam epitaxy, varying the Sc content x from 0 to 0.38. The nanowire geometry allows elastic relaxation to occur, resulting in strain-free, bulk-like Al1−xScxN. A non-linear evolution of lattice parameters and a continuous red-shift of the E2high and A1(TO) phonon modes as a function of Sc content are found, confirming its incorporation into the wurtzite lattice and revealing modifications of anion-cation bond strength and coordination environment.
Our results highlight the advantages of bulk-like Al1−xScxN for probing its fundamental properties, laying the ground work for further device applications.
Keywords: Molecular Beam Epitaxy; (Al,Sc)N; Nanowires