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HL: Fachverband Halbleiterphysik

HL 7: 2D Materials beyond graphene: Growth, structure and substrate interaction (joint session O/HL/TT)

HL 7.11: Vortrag

Montag, 9. März 2026, 17:30–17:45, HSZ/0204

MBE growth and characterization of high-quality monolayer MoS2 on stepped Au surface — •Sayan Debnath, Ram Prakash Pandeya, Konstantin Shchukin, Patrik Staudenmayer, and Alexander Grüneis — Optoelektronische Materialien Institut für Festkörperelektronik, TU Wien, 1040 Wien, Austria

In the present work, we investigate the growth of sub-monolayer MoS2 on Au(788) and Au(111), using molecular beam epitaxy. Sample growth quality is characterized using low-energy electron diffraction, X-ray photoemission spectroscopy, and scanning electron microscopy. Furthermore, a comparative study of the electronic properties was performed by studying the band structure using angle-resolved photoemission spectroscopy (ARPES), and the vibrational properties were measured by angle-resolved polarized Raman (ARPR) spectroscopy.

Our study reveals superior crystalline quality, with fewer S deficiencies, and better azimuthal order of MoS2 grown on the stepped Au(788) substrate compared to the Au(111). In the case of ARPES, we observed more resolved band dispersion on MoS2/Au (788), confirmed by probing the spin-orbit splitting at the Brillouin zone boundary (K point). On the other hand, ARPR of the first Raman mode E2g on MoS2/Au (788) deviates from the symmetry of freestanding MoS2, suggesting the effect of the stepped surface on the vibrational properties. We discuss the role of increased catalytic activity at step edges in promoting the growth of high-quality TMDCs, such as MoS2 and WS2, on stepped surfaces.

Keywords: MBE; TMDC; ARPES; RAMAN