Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 8: Ultra-fast Phenomena I

HL 8.6: Vortrag

Montag, 9. März 2026, 16:15–16:30, POT/0006

Ultrafast X-ray diffraction shows dynamics of phase domains make V2O3 films remember photoexcitation ten thousand times longer — •Oleg Gorobtsov^1,2, Yoav Kalcheim^3,4, Ziming Shao¹, Anatoly Shabalin³, Nelson Hua³, Daniel Weinstock¹, Ryan Bouck¹, Mathew Seaberg⁵, Diling Zhu⁵, Oleg Shpyrko³, Ivan Schuller³, and Andrej Singer¹ — ¹Cornell University, USA — ²University of Tübingen, Germany — ³University of California San Diego, USA — ⁴Technion-Israel Institute of Technology, Israel — ⁵SLAC National Accelerator Laboratory, USA

Metal-insulator transitions in vanadium oxides combine electronic and structural phase transformations. Memory effects present during the phase transition in thin V2O3 films make the material a candidate for neuromorphic computing, but what role does the structural phase heterogeneity play in memory? We used an X-ray free-electron laser probe to show that strain feedback on structural phase domain nucleation increases the metal-insulator relaxation time after an optically induced insulator-metal transition from nanoseconds to a hundred microseconds. The dynamic range and precision of the experiment distinguish that the memory follows a stretched exponential law, not a power law. We also provide an experimental basis for the transition incubation times during the first 10 picoseconds after the excitation.

Keywords: Vanadium oxide; X-ray laser; Ultrafast pump-probe; Neuromorphic memory; Mott transition