Dresden 2026 –
wissenschaftliches Programm
HL 9: Oxide Semiconductors: Growth and Fabrication
Montag, 9. März 2026, 15:00–16:30, POT/0051
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15:00 |
HL 9.1 |
Growth of rutile GeO2 by plasma-assisted suboxide molecular beam epitaxy — Alexander Karg, •Satjawoot Phiw-Ondee, Manuel Alonso-Orts, Marco Schowalter, Andreas Rosenauer, Martin Eickhoff, and Patrick Vogt
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15:15 |
HL 9.2 |
Wafer-scale transfer and integration of tungsten-doped vanadium dioxide films — •Guanyi Li, He Ma, and Peter J. Klar
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15:30 |
HL 9.3 |
Growth and characterization of ultra-wide bandgap oxide semiconductor LiGa5O8 — •Nazar Masiuta, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann
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15:45 |
HL 9.4 |
(N:)CuBi2O4 photocathode thin films for photoelectrochemical water splitting — •Miriam J. Fehrenbach, Dominic Rapf, Katarina S. Flashar, Ian D. Sharp, and Verena Streibel
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16:00 |
HL 9.5 |
High-throughput combinatorial synthesis of perovskite-type materials for solar applications — •Clemens Petersen, Andreas Rosnes, and Holger von Wenckstern
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16:15 |
HL 9.6 |
Pulsed laser deposition of rutile GeO2 thin films — •Hannah Dichelle, Sofie Vogt, Marius Grundmann, and Holger von Wenckstern
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