Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: Oxide Semiconductors: Growth and Fabrication
HL 9.1: Talk
Monday, March 9, 2026, 15:00–15:15, POT/0051
Growth of rutile GeO2 by plasma-assisted suboxide molecular beam epitaxy — Alexander Karg1, •Satjawoot Phiw-Ondee1, Manuel Alonso-Orts1,2, Marco Schowalter1, Andreas Rosenauer1,2, Martin Eickhoff1,2, and Patrick Vogt3 — 1Institute of Solid State Physics, University of Bremen, Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Germany — 3Max Planck Institute for Solid State Research, Stuttgart, Germany
The interest in ultra-wide bandgap (UWBG) semiconductors for high-power electronic applications is rapidly increasing, for which rutile germanium dioxide (r-GeO2) is a promising material. It possesses excellent properties: a bandgap of 4.6 eV [1], thermal conductivity of 51 W/mK [1], and a breakdown electric field of 7 MV/cm [1] and theoretical bipolar dopability [2].
This work reports on the growth of r-GeO2 on m-plane Al2O3 substrates using plasma-assisted suboxide molecular beam epitaxy, using a SnO2 buffer, followed by a r-GexSn(1-x)O2 buffer to stabilize the r-GeO2 phase. The growth of r-GeO2 on those buffer layers is demonstrated and the responsible nucleation mechanism is investigated in detail. Characterization was performed by atomic force microscopy (AFM) and high resolution X-ray diffraction (HRXRD). Selected r-GeO2 layers were analyzed by scanning transmission electron microscopy (STEM).
[1]: M. Labed et al., Materials Today 83, 513-537 (2025)
[2]: S. Chae et al., Appl. Phys. Lett. 114, 102104 (2019)
Keywords: molecular beam epitaxy; ultra-wide bandgap semiconductor; rutile germanium dioxide; thin fim; semiconductor growth