Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: Oxide Semiconductors: Growth and Fabrication
HL 9.2: Talk
Monday, March 9, 2026, 15:15–15:30, POT/0051
Wafer-scale transfer and integration of tungsten-doped vanadium dioxide films — •Guanyi Li1, 2, He Ma2, and Peter J. Klar1 — 1University of Giessen Institute of Physic, Giessen, 35392, Germany — 2Beijing University of Technology, Institute of Information Photonics Technology, Beijing 100124, People’s Republic of China
The trend in modern optoelectronic devices is towards greater flexibility, wearability, and multifunctionality. This demands more flexible fabrication methods of functional layers. Vanadium dioxide (VO2), with its metal-insulator transition (MIT) at 68 ∘C, is of interest for many optoelectronic devices. However, high-quality VO2 usually needs to be grown at T >450 ∘C in an oxygen-containing atmosphere implying a low compatibility with many optoelectronic device concepts, e.g., on flexible substrates. Here, we use a layer-by-layer transfer method of wafer-scale tungsten-doped VO2 films, which enables sequential integration of VO2 films with different MIT temperatures (down to 40 ∘C) onto arbitrary substrates. By stacking multiple VO2 films with different doping levels of W, a quasi-gradient-doped VO2 architecture can be achieved, effectively broadening the MIT temperature window and reducing the hysteresis of VO2. Such integrated VO2 films find a wide scope of applications, e.g., flexible temperature indicator strips, infrared camouflage devices, nonreciprocal ultrafast light modulators, or smart photo actuators. Our work promotes the development of more flexible and tunable optoelectronic devices integrated with VO2.
Keywords: vanadium dioxide; tungsten doping; phase transition; wafer-scalle transfer; vertical integration