Dresden 2026 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 9: Oxide Semiconductors: Growth and Fabrication

HL 9.6: Talk

Monday, March 9, 2026, 16:15–16:30, POT/0051

Pulsed laser deposition of rutile GeO₂ thin films — •Hannah Dichelle, Sofie Vogt, Marius Grundmann, and Holger von Wenckstern — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Germany

Rutile germanium-oxide has recently come into focus as an ultrawide bandgap material which is predicted to offer the possibility of ambipolar doping. ^[1,2] The stabilization of rutile phase GeO₂ is challenging due to the similar formation energies of the amorphous phase and α-Quarz phase.^[2] We present GeO₂ thin films fabricated by pulsed laser deposition at heater temperatures >450^∘C. To facilitate the crystallization in the rutile phase (Sn, Ge)O₂ buffer layers are grown on sapphire and TiO₂ substrates at heater temperatures >600^∘C. Both ternary Sn_xGe_1−xO₂ buffer layers and vertically composition graded buffer layers are used to stabilize the rutile phase. The structural properties of rutile phase GeO2 thin films are investigated as a function of the growth temperature and oxygen pressure.

1. Chae et al., Appl. Phys. Lett. 114, 102104 (2019)
2. Shimazoe et al., Jpn. J. Appl. Phys. 64, 050903 (2025)

Keywords: Germanium-oxide; ultrawide bandgap; Pulsed Laser Deposition