Dresden 2026 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 13: Magnetic Heuslers and Semiconductors
MA 13.6: Vortrag
Montag, 9. März 2026, 16:15–16:30, POT/0361
Enhanced anomalous Hall response via nodal line tuning in Co2VSn(1-x)Alx topological semimetal — •Sunil Wilfred DSouza1, Shivani Rastogi2, Gaurav Shukla3, Nidhi Shukla2, Jan Minár1, and Sanjay Singh2 — 1New Technologies Research Centre, University of West Bohemia, 30100 Pilsen, Czech Republic — 2School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India — 3National Institute for Materials Science (NIMS), Tsukuba 305-0047, Japan
Topological semimetals (TSMs) with nodal-line states exhibit strong Berry-curvature driven transport. We Investigate Co2VSn(1-x)Alx (x = 0-0.75) to understand how hole doping tunes the nodal line relative to the Fermi level. Al substitution shifts the nodal-line states upward, leading to a maximum intrinsic anomalous Hall conductivity (AHC) of 203 S/cm at x = 0.5, representing a significant enhancement over the undoped compound. First-principles calculations corroborate the nodal line in Co2VSn, its gapping under SOC, and its progressive alignment with the Fermi level upon Al doping. The correlation between nodal-line tuning and enhanced AHC highlights an effective strategy for controlling Berry-curvature driven transport in magnetic TSMs.
Keywords: Heuslers; Disorder; Anomalous Hall; Berry Phase; Topological semimetals