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MA: Fachverband Magnetismus

MA 43: Spin-Dependent Phenomena in 2D

MA 43.1: Hauptvortrag

Donnerstag, 12. März 2026, 09:30–10:00, POT/0112

Defect-Induced Phase Transitions in the 2D Magnetic Semiconductor CrSBr — •Shengqiang Zhou — Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

As an air-stable van der Waals magnetic semiconductor, CrSBr has attracted great research interest due to its exceptional optical, electronic, and magnetic properties [1]. Below its Néel temperature of 132 K, CrSBr exhibits a typical A-type antiferromagnetic order consisting of antiferromagnetically coupled ferromagnetic monolayers [1, 2]. In this talk, I will present the magnetic phase transition from antiferromagnetic to ferromagnetic order in CrSBr induced by ion irradiation [3, 4]. We observe the emergence and subsequent suppression of the ferromagnetic phase in CrSBr as the irradiation fluence increases. Structural analysis combined with first-principles calculations suggests that the formation of interstitials promotes ferromagnetic coupling between the layers. At moderate irradiation fluences, the Curie temperature gradually decreases, reflecting the impact of crystalline degradation. Surprisingly, at even higher irradiation fluences, CrSBr does not amorphize but instead transforms into a new crystalline phase. These findings indicate that, by precisely tuning irradiation parameters and employing lithography techniques, one can selectively modulate the induced ferromagnetism in CrSBr in terms of magnetization strength, critical temperature, and spatial distribution. [1] E.J. Telford, et al. Adv. Mater., 32, 2003240 (2020). [2] F. Long, et al. Appl. Phys. Lett. 123, 222401 (2023). [3] F. Long, et al. Nano Lett. 23, 8468 (2023). [4] F. Long, et al. Adv. Phys. Res., 3, 2400053 (2024)

Keywords: CrSBr; 2D magnetism; Defect engineering; Phase transition; Ion irradiation