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MA: Fachverband Magnetismus
MA 52: Poster Magnetism III
MA 52.33: Poster
Donnerstag, 12. März 2026, 15:00–17:00, P4
Inverse garnet/Pt heterostructures by lateral crystallization — •Christian Holzmann1, Stephan Glamsch1, David Stein1, Maximilian Mihm1, Aladin Ullrich1, Richard Schlitz2, Michaela Lammel2, Johannes Boneberg2, and Manfred Albrecht1 — 1Institute of Physics, University of Augsburg, 86159 Augsburg, Germany — 2Department of Physics, University of Konstanz, 78457 Konstanz, Germany
Rare-earth iron garnet thin films are known for their low Gilbert damping, insulating nature, and tunable magnetic properties. These favorable properties are mostly limited to single-crystalline films grown on specific substrates like GGG, which limits their applications [1]. To expand the functionallity of garnet thin films, we grow a thulium iron garnet film on a thin Pt layer by means of lateral crystallization. The Pt layer is sputter-deposited on a GSGG substrate, followed by garnet deposition by PLD. Hereby, a hole pattern in the Pt layer - either created naturally by thermal dewetting or artifically patterned - acts as crystallization seed. While the as-grown film is amorphous, post-deposition annealing at 700∘C results in a lateral garnet crystallization rate of about 1 um/min and a single-crystalline garnet film on top of the Pt layer. This garnet film exhibits similar properties to an epitaxially grown film, including Gilbert damping as low as 0.008 [2]. Therefore, the lateral crystallization of garnet films opens up new possibilities to combine garnet and metal films for spintronic devices.
[1] Sailler, S. et al., Phys. Rev. Mater. 8, L020402 (2024).
[2] Holzmann, C. et al., Phys. Rev. Mater. 9, 114416 (2025).
Keywords: Garnets; Lateral crystallization; Ferrimagnets; Thin films; Multilayer