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MM: Fachverband Metall- und Materialphysik

MM 21: Phase Transformations II

MM 21.7: Vortrag

Mittwoch, 11. März 2026, 12:00–12:15, SCH/A215

Investigating the temperature-driven structural phase transition in α-In2Se3: A Raman study — •Saswata Talukdar, Mitanshi Gupta, Devesh Negi, Suvodeep Paul, Shalini Badola, Shivani Tripathi, Ravi Shankar Singh, and Surajit Saha — Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India

In recent years, the complex characteristics and polymorphic nature of indium selenide (In2Se3) have distinguished it as a prominent candidate among 2D semiconductors for memory and nano-electronic applications. Despite comprehensive research on its thermal, electrical, and optical properties, the structural dynamics, especially the phase transitions over temperature, remain elusive. In this work, temperature-dependent Raman spectroscopy of bulk α-In2Se3 reveals well-defined spectral signatures corresponding to its multiple polymorphic phases, providing direct evidence of its structural transitions. Our results also show that the phase transition is governed not solely by temperature, but it is further influenced by the local strain, which forms wrinkles on the surface of the material, playing a crucial role in directing the transition pathway. Moreover, comparative Raman measurements on exfoliated flakes highlight a pronounced thickness-dependent modulation of the transition behavior, underscoring the critical role of dimensionality in governing phase stability and evolution. Altogether, this work presents a comprehensive picture of the phase transitions in In2Se3, offering valuable insights for its integration into future high-performance phase-change memory applications.

Keywords: In2Se3; Raman spectroscopy; Structural transition; Wrinkle; Thickness-dependent