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MM: Fachverband Metall- und Materialphysik
MM 40: Transport in Materials: Diffusion, Charge, or Heat Conduction IV
MM 40.7: Vortrag
Freitag, 13. März 2026, 12:00–12:15, SCH/A216
Atomic Transistor-Based Implementation of Logic Gates — •Merlin Schieler1, Florian Schieren1, Carlotta Buchner1, Felix Frank1, Ida Göbel1, Katja Marschall1, Fanqing Xie1, Florian Wertz1, and Thomas Schimmel1,2 — 1Institute of Applied Physics, Karlsruhe Institute of Technologie (KIT), 76131 Karlsruhe, Germany — 2Institute of Nanotechnology, Karlsruhe Institute of Technologie (KIT), 76344 Eggenstein-Leopoldshafen, Germany
An atomic-scale quantum conductance switch was demonstrated in our group which allows to open and close an electrical circuit by the controlled and reproducible reconfiguration of individual silver atoms within an atomic-scale junction. The only movable parts of the switch are the contacting atoms. The device is fabricated by electrochemical deposition of silver atoms between the source and the drain electrode. It is entirely controlled by an external voltage of a few millivolts applied to an independent gate electrode. Controlled switching was performed between a quantized, electrically conducting "on-state" exhibiting a conductance of G0 = 2e2/h ≈ 1/12.9 kΩ or preselectable multiples of this value and an insulating "off-state". The device, which reproducibly operates at room temperature, represents an atomic transistor or relay, opening intriguing perspectives for the emerging fields of quantum electronics and logics on the atomic scale.
Here, we show a first demonstration of logical operations such as NAND and NOR with electrical circuits consisting of two atomic-scale quantum conductance switches.
Keywords: Nanotechnology; Single-atom transistor; Metallic point contact; Quantum conductance; Post-silicon technology