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O: Fachverband Oberflächenphysik

O 10: 2D Materials beyond graphene: Growth, structure and substrate interaction (joint session O/HL/TT)

O 10.9: Vortrag

Montag, 9. März 2026, 17:00–17:15, HSZ/0204

Low Temperature MOCVD Growth of two-dimensional InSe and InSe/WS2 Heterostructures — •Robin Guenkel, Nils Langlotz, Matvei Kislitsyn, Juergen Belz, and Kerstin Volz — mar.quest|Marburg Center for Quantum Materials and Sustainable Technologies, Philipps University Marburg, Germany

Two-dimensional van der Waals heterostructures offer powerful opportunities for engineered optoelectronic functionality, particularly when type-II band alignment enables efficient charge separation and interlayer transitions. InSe and WS* are especially promising in this regard because their band structures allow for the formation of a type-II interface at the Γ point, which avoids momentum mismatch. This is an essential requirement for robust radiative processes in 2D stacks. This talk presents a low-temperature metal-organic chemical vapor deposition (MOCVD) approach for synthesizing high-quality InSe and vertically integrated InSe/WS2 heterostructures. Using DTBSe and TMIn at 350 °C, we synthesize homogeneous, single-phase InSe films on 2-inch sapphire substrates and extend the process to directly grow on monolayer WS2. Atomic force microscopy, Raman spectroscopy, and energy-dispersive X-ray spectroscopy provide insight into the morphology, crystallinity, and composition of the films, offering a detailed understanding of the growth behavior and the influence of the substrate surface chemistry.

Keywords: MOCVD; 2D Crystal Growth; InSe; AFM; Raman