Dresden 2026 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 15: Spins on surfaces at the atomic scale I
O 15.4: Vortrag
Montag, 9. März 2026, 16:00–16:15, WILL/A317
Single spin control of atomic defects in monolayer MoS2 — •Kwan Ho Au-Yeung1,3, Wantong Huang1,3, Johanna Matusche1,3, Paul Greule1,3, Jonas Arnold1,3, Lovis Hardeweg1,3, Máté Stark1,3, Luise Renz1,3, Affan Safeer2, Daniel Jansen2, Jeison Fischer2, Thomas Michely2, Wolfgang Wernsdorfer1,3, Christoph Sürgers1,3, Johannes Schwenk1,3, Wouter Jolie2, and Philip Willke1,3 — 1Physikalisches Institut, Karlsruhe Institute of Technology, Karlsruhe — 2II. Physikalisches Institut, Universität zu Köln, Köln — 3Center for Integrated Quantum Science and Technology, Karlsruhe Institute of Technology, Karlsruhe
Point defects in two-dimensional (2D) semiconductors host localized quantum states that can function as sensors, single-photon emitters, and qubits, but their controlled realization and individual addressability in atomically thin hosts remain challenging. Here we combine scanning tunneling microscopy with electron spin resonance (ESR-STM) to achieve single-spin control of atomic defect in a monolayer transition-metal dichalcogenide. Using STM manipulation, we create individual point defects, including sulfur vacancies and substitutional impurities in monolayer MoS2 on graphene/Ir(111). Scanning tunneling spectroscopy and ESR measurements reveal their electronic structures and magnetic properties respectively, while pulsed ESR schemes enable quantum control of their spin states at the atomic scale. Our results demonstrate that monolayer MoS2 provides a solid-state quantum platform that directly links 2D materials engineering with atomic-scale spin initialization, control, and readout.
Keywords: 2D materials; Spin defects; ESR-STM; Quantum control; STM manipulation