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O: Fachverband Oberflächenphysik
O 48: Metal & Semiconductor substrates: Structure, epitaxy and growth
O 48.4: Vortrag
Dienstag, 10. März 2026, 15:15–15:30, HSZ/0204
Enhanced thermal switching of an azobenzene derivative via metal doping on graphitic surfaces. — •Nidhi Rawat1, Hariom Birla2, and Thiruvancheril G. Gopakumar3 — 1Indian Institute of Technology Kanpur, Kanpur, India — 2Indian Institute of Technology Kanpur, Kanpur, India — 3Indian Institute of Technology Kanpur, Kanpur, India
The thermal isomerization (switching) of azobenzene derivatives is often limited by high activation barriers, limiting efficient switching between trans and cis configurations induced by heat. In this study, we first examined the thermal induced switching of pristine azobenzene-based thin films and observed no isomerization upon heating. Upon introducing a metal dopant into the films, several morphological changes are observed, across varying molecular coverages, upon heating confirming that thermal switching is readily induced in the doped films. The analysis of the morphology and microscopic structure of the film is analysed using AFM and STM. These results clearly demonstrate that metal doping can effectively modulate the energy barrier and facilitate thermally driven molecular switching. This approach offers a promising pathway to tailor the isomerization dynamics of molecular systems, providing new opportunities for the development of thermally responsive devices.
Keywords: Molecular switching; Isomerization; Dopant; Energy barrier; Thin films