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O: Fachverband Oberflächenphysik

O 63: Topology and symmetry protected materials & Topological insulators (joint session O/HL/TT)

O 63.7: Vortrag

Mittwoch, 11. März 2026, 16:30–16:45, HSZ/0401

fabrication and characterization of the Moiré surface state on a topological insulator — •yi zhang — Shanghai Jiao Tong University, Shanghai, China

A Moire* superlattice on the topological insulator surface is predicted to exhibit many novel properties but has not been experimentally realized. Here, we developed a two-step growth method to successfully fabricate a topological insulator Sb2Te3 thin film with a Moire* superlattice, which is generated by a twist of the topmost layer via molecular beam epitaxy. The established Moire* topological surface state is characterized by scanning tunneling microscopy and spectroscopy. By application of a magnetic field, new features in Landau levels arise on the Moire* region compared to the pristine surface of Sb2Te3, which makes the system a promising platform for pursuing next-generation electronics. Notably, the growth method, which circumvents contamination and the induced interface defects in the manual fabrication method, can be widely applied to other van der Waals materials for fabricating Moire* superlattices.

Keywords: two-step growth; topological insulator; Moiré superlattice; Landau level