Dresden 2026 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 7: 2D Materials: Electronic structure, excitations, etc. I (joint session O/HL/TT)

O 7.5: Vortrag

Montag, 9. März 2026, 11:45–12:00, TRE/MATH

Influence of Vanadium Doping on WSe₂, as seen through ARPES — •Jana Kähler^1,2, Florian K. Diekmann^1,2, Matthias Kalläne^1,2,3, Tim Riedel^1,2, Adina Timm^1,2, Anja Yalim^1,2, Jens Buck^1,2, Meng-Jie Huang², Jules M. Knebusch^1,2, Luka Hansen^1,3, Jan Benedikt^1,3, and Kai Rossnagel^1,2,3 — ¹Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany — ²Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — ³Kiel Nano, Surface and Interface Science KiNSIS, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany

Spintronics offers a compelling, energy-efficient alternative to traditional electronics with potential applications in communications, sensing, and information processing. The vanadium-doped layered transition metal dichalcogenide 2H-WSe₂ is particularly promising as a room-temperature magnetic semiconductor with gate-tunable transport properties. Here, we use a combination of 11 eV laser, 21.2 eV He-lamp, and soft X-ray synchrotron ARPES to highlight the influence of a fairly small vanadium doping on the electronic structure of WSe₂. Both the pristine and doped compounds were grown by chemical vapor transport in our own laboratory.

Keywords: Transition metal dichalgonide (TMDC); Chemical vapor transport (CVT); Electronic structure; Magnetic semiconductor