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O: Fachverband Oberflächenphysik

O 71: 2D Materials: Electronic structure, excitations, etc. – Poster (joint session O/TT)

O 71.22: Poster

Mittwoch, 11. März 2026, 18:00–20:00, P2

STM/STS Studies of Single-Atom Fe Inclusions in MBE-grown Monolayer MoS₂/Gr/Ir(111) — •Alina Drechsler, Marta Przychodnia, Maciej Bazarnik, and Anika Schlenhoff — Institute of Physics, University of Münster, Germany

Transition metal dichalcogenides (TMDs) exhibit thickness-dependent electronic properties and are highly sensitive to structural defects, which can strongly modify their density of states even at low concentrations. Defect engineering has therefore become an important route to tailor their electronic, magnetic, optical, and catalytic behaviour. While most of the current research focuses on naturally occurring defects in chemical vapour-deposited TMDs, we focus on intentional single-atom inclusions in TMDs grown by molecular beam epitaxy (MBE) to improve control in defect engineering.

We present scanning tunneling microscopy and spectroscopy (STM/STS) studies of Fe-doped monolayer MoS₂ on Gr/Ir(111), achieved by co-evaporation Fe during MBE growth. By comparing to undoped MoS₂ grown under identical UHV conditions, we identify the Fe-related defects and measure their electronic signatures. STS reveals in-gap states associated with single-atom Fe inclusions, whose spatial distributions are resolved via differential conductance mapping. Additionally, resonant tunneling spectroscopy shows that Fe inclusions modify the image potential states by locally shifting their energetic positions. Our work demonstrates the potential of single-atom substitutions for tailoring the electronic properties of two-dimensional TMDs.

Keywords: Scanning Tunneling Spectroscopy; Scanning Tunneling Microscopy; 2D materials; single atoms; dopants