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O: Fachverband Oberflächenphysik

O 71: 2D Materials: Electronic structure, excitations, etc. – Poster (joint session O/TT)

O 71.2: Poster

Mittwoch, 11. März 2026, 18:00–20:00, P2

Exciton Transport in Monolayer TMDs — •Lifeng Ou, Alejandro Molina-Sánchez, and Alberto García-Cristóbal — ICMUV, University of Valencia, Valencia, Spain

Atomically thin transition metal dichalcogenides semiconductor emerges as promising candidates for novel optoelectronic application, displaying weak dielectric screening due to its truly two-dimension character. The optical properties are mostly related to inter-band transitions between valence and conduction bands, also called the strongly binding electron hole pair, exciton. Strain is expected to impact spatiotemporal distribution of excitons, e.g. spatially inhomogeneous strain acts as a driving force for exciton/carrier funneling, similarly to bias fields for charged particles. In this work we demonstrate the capability to manipulate exciton motion via spatially modulated strain fields, where excitonic energy especially its bandgap is largely tunable and the effective mass of electronic valleys is modified resulting in a qualitative change of the excitonic landscape and efficiency of exciton-phonon scattering channels. These transport properties are represented by the coupled two equations, continuity equation and drift-diffusion equation, which derive from zero-order and first-order moment of Boltzmann equation, respectively. In addition, the simulation diffusion coefficient and mobility in latter equation are evaluated by first-principle and experiment qualitatively, as the function of strain fields.

Keywords: 2D TMDs; exciton transport; drift-diffusion equation