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O: Fachverband Oberflächenphysik
O 73: Graphene: Growth, structure and substrate interaction – Poster
O 73.3: Poster
Mittwoch, 11. März 2026, 18:00–20:00, P2
Graphene on 4H-SiC and 6H-SiC: The Influence of the SiC-Polytype onto the Local Transport Properties of Graphene — •Simeon Bode1, Benno Harling1, Klaus Pierz2, Teresa Tschirner2, and Martin Wenderoth1 — 1IV. Physikalisches Institut, Georg-August-Universität Göttingen — 2Physikalisch-Technische Bundesanstalt (PTB), Braunschweig
Studies of Graphene on silicon carbide have shown a strong dependence of the surface termination of the SiC substrate on the local transport properties. In this study, we investigate the influence of the polytype of the substrate SiC onto the local properties of Polymer Assisted Sublimation Growth (PASG) graphene. It is known that graphene on 6H-SiC displays two distinct surface terminations [1], while on 4H-SiC it is only one dominant surface termination. Here, local characterization is done by AFM and STM, while the local electronic properties are investigated by STS. Graphene on both polytypes present a similar characteristic in multibias topographies. To gain access to local transport properties, we utilized Scanning Tunneling Potentiometry (STP), which revealed two distinct sheet resistances attributed to the different surface terminations. Although PASG graphene on 4H-SiC shows only one surface termination, the spread of the sheet resistance is much larger than the difference of the two distinct sheet resistances on 6H-SiC. This work was financially supported by the DFG through the FOR5242. [1] Sinterhauf et al., Nat Commun 11, 555, 2020
Keywords: epitaxial Graphene; SiC; Scanning Tunneling Potentiometry; Transport; proximity effect