Dresden 2026 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 73: Graphene: Growth, structure and substrate interaction – Poster

O 73.4: Poster

Mittwoch, 11. März 2026, 18:00–20:00, P2

Sn intercalation of Zero-Layer Graphene — •Jan-Lucas Hornbostel, Benno Harling, and Martin Wenderoth — IV. Physikalisches Institut, Georg-August Universität Göttingen

Graphene is a 2D material with a wide range of potential applications. Our research area is the intercalation of epitaxial graphene with tin, a system that has recently shown interesting phenomena such as Mott states [1]. To achieve such systems, zero-layer graphene (ZLG) as starting point is intercalated. Tin binds to the SiC substrate transforming the ZLG into quasi-freestanding monolayer graphene. ZLG graphene can be epitaxially grown on SiC using various methods. The intercalation of Sn on polymer assisted sublimation growth (PASG) samples has shown to be strongly influenced by substrate steps [2]. In this study, we grow ZLG samples using resistive heating under UHV conditions on 6H-SiC. Compared to PASG, AFM and KPFM reveal a weakness of UHV growth for producing high quality ZLG samples, namely a generally disorder structure and depressions within the terraces. This type of defects disappears at higher temperatures. After ZLG growth and verification, Sn is deposited. We focus specifically on the influence of sample temperature (120-1000 K) during deposition. These are analyzed using AFM and KPFM. [1] Ghosal et al, Phys. Rev. B 111, 235426, 2025 [2] Harling et al, Carbon 244, 120711, 2025

Keywords: Epitaxial Graphene; Intercalation; Tin; KPFM