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O: Fachverband Oberflächenphysik
O 74: Graphene: Electronic structure, excitations, etc. – Poster (joint session O/TT)
O 74.8: Poster
Mittwoch, 11. März 2026, 18:00–20:00, P2
Se-intercalation of graphene on SiC(0001) — •Susanne Wolff1,2 and Thomas Seyller1,2 — 1Institut für Physik, Technische Universität Chemnitz — 2Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Technische Universität Chemnitz
The epitaxial growth of graphene on SiC in an argon atmosphere is a well-established method to produce homogeneous, high quality carbon layers. The first-grown carbon layer exhibits a (6√3×6√3)R30∘ periodicity and is partially covalently bound to the SiC substrate. Therefore, this so-called buffer layer lacks the typical electronic properties of graphene. One pathway to decouple the buffer layer from the substrate and obtain graphene-like electronic properties is intercalation, which involves introducing a certain element at the buffer layer/SiC interface. Furthermore, the choice of intercalant influences the electronic properties of the decoupled graphene.
In this study, we investigated the intercalation of a buffer layer with selenium (Se). This process was carried out in a two-zone tube furnace, with the selenium precursor SnSe2 and the buffer layer positioned in different temperature zones. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and angle-resolved photoelectron spectroscopy (ARPES). XPS revealed successful decoupling of the buffer layer with intercalated Se at the interface and not-intercalated Se on the surface. ARPES measurements in the vicinity of the Dirac point of graphene showed a p-type doping of the decoupled carbon layer.
Keywords: graphene; silicon carbide; intercalation; selenium