Dresden 2026 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 89: Spins on surfaces at the atomic scale II

O 89.4: Vortrag

Donnerstag, 12. März 2026, 15:45–16:00, WILL/A317

Bottom-up realization of band structure using arrays of individual Cs atoms on InSb(110) — •Niek M.M. Aarts, Kira Junghans, Roel Burgwal, Daniel Wegner, and Alexander A. Khajetoorians — Institute for Molecules and Materials, Radboud Universiteit, Nijmegen, Netherlands

The combination of atomic manipulation and scanning tunneling spectroscopy has become a powerful platform for quantum simulation of electronic structure. The approach is based on the atomically precise placement of atoms and the flexibility to realize structures with a variety of shapes and symmetry. Inherent to this approach is role of finite size effects in the tailored electronic structure. This plays an integral role in understanding the influence of various interactions, like spin-orbit interactions, or electron-electron interactions, on any potential quantum phase of matter to be simulated.

Here, we study the evolution of the electronic structure as a function of lattice size, using the recently discovered quantum simulator platform of Cs on InSb(110). Using STM, we start by studying structures that exhibit atomic like states and expand these structures into the molecular limit. We study the changes in the localized states and the symmetry of the responsible wavefunctions. We then quantify the increase of states as the number of sites in the system increases, and band structure emerges. We also discuss the role of the size of the artificial atomic sites. This extension of the Cs/InSb(110) quantum simulator to larger systems enables the study of artificial band structure in the presence of strong SOC.

Keywords: STM; Quantum simulator; Band structure; Atomic manipulation; Artificial lattice