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O: Fachverband Oberflächenphysik
O 95: 2D Materials: Stacking and heterostructures (joint session O/HL/TT)
O 95.1: Vortrag
Freitag, 13. März 2026, 09:30–09:45, HSZ/0401
A new fabrication method for metal intercalated epitaxial graphene devices — •Marc Bothe1, Stefan Wundrack1,2, Marcelo Jaime1, Klaus Pierz1, Frank Hohls1, Rainer Stosch1, Hans Werner Schumacher1, Andrey Bakin2, and Teresa Tschirner1 — 1Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany — 2Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany
Epitaxial graphene grown on silicon carbide is a promising platform to achieve metal intercalation. It enables the creation of two-dimensional metal layers that are encapsulated and protected by graphene. However, the use of metal intercalated graphene samples for lithographic device fabrication presents two critical challenges. First, solvents used in the lithography process lead to the deintercalation of the metal atoms. Second, the presence of lattice defects in the graphene - necessary for the intercalation process - compromises the structural and electronic integrity of the device. We present a novel fabrication method that solves these problems. In our approach, the graphene devices are first pre-structured using lithography and subsequently intercalated. This is made possible by a spatial separation on the sample between the device structures and the intercalation origin and by intercalation channels that can guide the intercalation front reliably to the devices. We demonstrate this method on gallium intercalated epitaxial graphene Hall bars that exhibit superconducting behaviour.
Keywords: graphene; metal intercalation; transport measurements; 2D Gallium; superconductivity