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O: Fachverband Oberflächenphysik
O 95: 2D Materials: Stacking and heterostructures (joint session O/HL/TT)
O 95.6: Vortrag
Freitag, 13. März 2026, 10:45–11:00, HSZ/0401
Moiré-Driven Electronic Modulations in Weakly Coupled h-BN/Graphite — •Fábio J. R. Costa1,2,7, Daniel Arribas2, Thiago G. L. Brito2, Tin S. Cheng3, Jonathan Bradford3, Amelia Thompson3, Alex Saywell3, Christopher J. Mellor3, Peter H. Beton3, Sergey V. Novikov3, Juliette Plo4, Bernard Gil4, Guillaume Cassabois4,5, Luiz F. Zagonel1, Klaus Kuhnke2, Klaus Kern2,6, and Anna Rosławska2 — 1University of Campinas, Brazil — 2Max-Planck-Institut für Festkörperforschung, Germany — 3University of Nottingham, UK — 4Laboratoire Charles Coulomb, France — 5Institut Universitaire de France, France — 6EPFL, Lausanne, Switzerland — 7Current address: Université de Strasbourg, CNRS, IPCMS, Strasbourg, France
Van der Waals materials and their heterostructures offer exciting opportunities for next-generation nanophotonic and electronic technologies. Their electronic and optical properties can be modulated by moiré superlattices that emerge when mismatched layers are stacked together. Hexagonal boron nitride (h-BN) is a key platform in this context, yet the influence of moiré patterns on weakly interacting h-BN interfaces remains underexplored. Here1, we use scanning tunneling microscopy to resolve large moiré superlattices in h-BN/graphite and uncover pronounced nanoscale modulations of the electronic landscape, despite their weak interlayer interactions. These findings position moiré engineering in h-BN as a powerful tool to tailor local functionalities in van der Waals heterostructures. Ref.: 1. Fábio J. R. Costa et al. ACS Nano 2025 19 (40), 35528-35538
Keywords: Hexagonal boron nitride; Moiré superlattices; van der Waals heterostructures; Scanning tunneling microscopy; Scanning tunneling spectroscopy