Dresden 2026 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
QI: Fachverband Quanteninformation
QI 2: Implementations I
QI 2.10: Vortrag
Montag, 9. März 2026, 12:30–12:45, BEY/0245
A heat-resilient hole spin qubit in silicon — Victor Champain1, Gabriele Boschetto2, Heimanu Niebojewski2, Benoit Bertrand2, Lorenzo Mauro2, Marion Bassi1, Vivien Schmitt1, Xavier Jehl1, Simon Zihlmann1, Romain Maurand1, Yann-Michel Niquet3, •Clemens Winkelmann1, Silvano De Franceschi1, Biel Martinez2, and Boris Brun1 — 1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France — 2Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France — 3Univ. Grenoble Alpes, CEA, IRIG-MEM-L Sim, Grenoble, France
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubits are found to overheat the spins' environment, which unexpectedly induces Larmor frequency shifts, reducing thereby gate fidelities. In this study, we shine light on these elusive thermal effects, by experimentally characterizing the temperature dependence of the Larmor frequency for a single hole spin in silicon. Our results unambiguously reveal an electrical origin underlying the thermal susceptibility, stemming from the spin-orbit-induced electric susceptibility. We perform an accurate modeling of the spin electrostatic environment and gyromagnetic properties, allowing us to pinpoint electric dipoles as responsible for these frequency shifts, that unfreeze as the temperature increases. Surprisingly, we find that the thermal susceptibility can be tuned with the magnetic field angle and can even cancel out, unveiling a sweet spot where the hole spin is rendered immune to thermal effects. arXiv:2509.15823
Keywords: hole spin qubit; sweet spot; thermal resilience; decoherence; spin-orbit coupling