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QI: Fachverband Quanteninformation
QI 6: Implementations II
QI 6.9: Vortrag
Dienstag, 10. März 2026, 12:15–12:30, BEY/0245
Highly crystalline superconducting resonators grown on reconstructed sapphire via Thermal Laser Epitaxy and Molecular Beam Epitaxy — •Thomas J. Smart1, Marc Neis2, Roudy Hanna1,2, Marcello Gaurdascione2, Michael Schleenvoigt1, Joscha Domnick1, Benjamin Bennemann1, Janine Lorenz3, Jin Hee Bae1, Abdur R. Jalil1, Pavel A. Bushev2, Felix Lüpke3, Peter Schüffelgen1, Detlev Grützmacher1, and Rami Barends2 — 1Peter Grünberg Institute of Semiconductor Nanoelectronics (PGI-9), Forschungszentrum Jülich & Jülich Aachen Research Alliance; 52425, Jülich, Germany — 2Peter Grünberg Institute of Functional Quantum Systems (PGI-13), Forschungszentrum Jülich, Campus-Boulevard 79, 52074, Aachen, Germany — 3Peter Grünberg Institute of Quantum Nanoscience (PGI-3), Forschungszentrum Jülich, 52425, Jülich, Germany
In the ongoing search for optimizing quantum computing hardware, many alternative superconducting materials are being investigated, including nitrogen-based compounds with large superconducting band gaps, high Tc values, and resistance to oxidation. Concurrently, thermal reconstruction of substrates via Thermal Laser Epitaxy enables enhanced epitaxial growth and pristine interface quality. We demonstrate the growth of highly crystalline TiN on reconstructed sapphire via Molecular Beam Epitaxy, subsequently fabricated into superconducting resonators. These resonators produce internal quality factors greater than 2e6 at single-photon values, among the highest recorded for crystalline TiN on sapphire.
Keywords: Thermal Laser Epitaxy; Nitrides; Superconductor; Sapphire; Molecular Beam Epitaxy