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TT: Fachverband Tiefe Temperaturen

TT 10: Correlated Electrons: Other Theoretical Topics

TT 10.7: Vortrag

Montag, 9. März 2026, 12:30–12:45, HSZ/0103

Ising Spin-Orbit Coupling in Three Dimensions — •Tonghua Yu, Eli Gerber, and Benjamin Wieder — Institut de Physique Théorique, Université Paris-Saclay, CEA, CNRS, F-91191 Gif-sur-Yvette, France.

Ising-type spin-orbit coupling (SOC) that produces out-of-plane spin polarization has been extensively explored in nonmagnetic two-dimensional (2D) materials, and has been shown to give rise to intriguing phenomena such as Pauli-limit-violating and spin-triplet superconductivity, SOC-polarized (interacting) topological bands, and high-performance nonvolatile valley spin valve. For 2D systems lying in the xy-plane, Ising SOC enforces that the bulk is nearly S_z-symmetric, in sharp contrast to systems dominated by Rashba or Dresselhaus SOC. Though all known examples of Ising SOC occur in 2D mono- or few-layer systems, there is no mathematical obstruction that restricts three-dimensional (3D) crystals from exhibiting nearly perfect (Ising-like) SOC textures. Using Green’s functions and the projected spin spectrum applied to first-principles calculations, we identify 3D materials with Ising SOC that do not decompose into simple van der Waals layers of 2D Ising SOC materials, and we characterize their associated topological properties. Our calculations expand the class of Ising SOC materials and reveal new venues for spintronics and unconventional superconductivity.

Keywords: Spin-orbit coupling; Topological insulators; Spintronics; Electronic structure; Numerical methods