Dresden 2026 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 16: 2D Materials beyond graphene: Growth, structure and substrate interaction (joint session O/HL/TT)

TT 16.10: Vortrag

Montag, 9. März 2026, 17:15–17:30, HSZ/0204

Synthesis of Vertically Stacked 2D-hBN/Borophene Heterostructures on Ir(111) via Intrinsic Segregation — •Marko Kriegel, Karim Omambac, Smruti Mohanty, Birk Finke, Frank-J. Meyer zu Heringdorf, and Michael Horn-von Hoegen — University Duisburg-Essen and Center for Nanointegration Duisburg-Essen (CENIDE), Lotharstr. 1, 47057 Duisburg, Germany

Research efforts on 2D materials increasingly target complex architectures built from high-quality heterostructures. A key challenge remains the reliable and scalable in-situ fabrication of such systems. In this work, we use high-resolution spot-profile analysis LEED (SPA-LEED) and -microscopy (LEEM) to investigate a synthesis route for an hBN/borophene heterostructure on Ir(111) based on intrinsic segregation. At elevated temperatures, boron dissolves into the Ir subsurface region during exposure to the borazine precursor B₃N₃H₆ in a CVD process [1], thereby creating a boron reservoir. Increasing the precursor pressure drives the chemical balance toward formation of a complete hBN layer across the Ir surface [2]. Upon cooldown, the decreasing boron solubility induces segregation, resulting in the growth of a continuous borophene layer beneath the hBN overlayer. This one-step CVD approach establishes a promising, scalable pathway for the controlled synthesis of high-quality 2D heterostructures. [1] K. Omambac et al., ACS Nano 15 (2021) 7421 [2] K. Omambac et al., ACS Nano 17 (2023) 17946

Keywords: in-situ synthesis; intrinsic segregation; hexagonal Boron Nitride/Borophene heterostructure; chemical vapor deposition