TT 20: 2D Materials II – Electronic and Transport Properties (joint session HL/TT)
Montag, 9. März 2026, 15:00–16:30, POT/0081
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15:00 |
TT 20.1 |
Ballistic electrostatic graphene superlattices using He ion-milled etching masks — •Rebecca Hoffmann, Giulia Piccinini, Julien Barrier, David Barcons Ruiz, Hanan Herzig Sheinfux, Takashi Taniguchi, Kenji Watanabe, Adrian Bachtold, and Frank H.L. Koppens
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15:15 |
TT 20.2 |
Tomographic flow regime in the 2D Corbino disk geometry — •Grigorii Starkov
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15:30 |
TT 20.3 |
Pulsed-gate spectroscopy of the electron-hole block- ade in bilayer graphene double quantum dots — •Lars Mester, Hubert Dulisch, Katrin Hecker, Konstantinos Kontogeorgiou, Samuel Möller, Leon Stecher, Kenji Watanabe, Takashi Taniguchi, Fabian Hassler, Christian Volk, and Christoph Stampfer
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15:45 |
TT 20.4 |
Temperature Dependent Electrical Transport in Thin SnSe2 — •Lars Thole, Aarti Lakhara, Preeti A. Bhobe, and Rolf J. Haug
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16:00 |
TT 20.5 |
Polarization resolved Electron Spin Resonance in two-dimensional electron systems — •Daniiar Khudaiberdiev, Alexey Shuvaev, Michail Glazov, Anton Shchepetilnikov, Viacheslav Muravev, Christian Reichl, Werner Wegscheider, and Andrei Pimenov
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16:15 |
TT 20.6 |
First-Principles Investigation of Electronic Transport in 2D GaSe: Backward Diodes, p-i-n FETs, and Double-Gate MOSFETs — •Dogukan Hazar Ozbey and Engin Durgun
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