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TT: Fachverband Tiefe Temperaturen
TT 42: Other Transport Topics
TT 42.6: Vortrag
Mittwoch, 11. März 2026, 10:45–11:00, HSZ/0105
Fluctuation Spectroscopy and Filament Simulations on HfO2 RRAM devices — •Demian Ranftl1, Yingxin Li2, Tristan Stadler1, Eszter Piros2, Philipp Schreyer2, Taewook Kim2, Lambert Alff2, and Jens Müller1 — 1Institute of Physics, Goethe University, Frankfurt am Main, Germany — 2Institute of Materials Science, TU Darmstadt, Darmstadt, Germany
Low-frequency noise spectroscopy plays a crucial role in understanding resistive switching mechanisms and filament dynamics in RRAM devices [1]. In this work, we compare the noise characteristics of undoped [2] and La-doped [3] HfO2-based devices across multiple resistance states and during DC cycling. Measurements are complemented by phenomenological simulations that assume various states of a stable filament with differing amounts of surrounding defects. The results provide new insights into the roles of filament geometry and defect densities on resistance and noise behaviour. We identify multi-stage resistance-noise scaling relationships, highlighting the competition between trap numbers and system size. These findings offer deeper insight into switching dynamics and the role of doping in modulating noise sources, contributing to the optimisation of RRAM configurations for neuromorphic applications.
[1] J. Müller, Contemporary Physics 29 (2025)
[2] P. Schreyer, N. Kaiser et al., ACS Appl. Mater. Interfaces (2025)
[3] T. Kim, M. Major et al., Adv. Electron. Mater. (2025)
Keywords: RRAM; Memristor; HfO2; Filament; Simulation