Dresden 2026 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 58: Quantum Transport and Quantum Hall effects (joint session HL/TT)
TT 58.5: Vortrag
Mittwoch, 11. März 2026, 16:00–16:15, POT/0006
A topological field-effect memristor — •Fabian Hartmann1, Manuel Meyer1, Selena Barragan1, Sergey Krishtopenko1,2, Jean-Baptiste Rodriguez3, Eric Tournie3, Benoit Jouault2, Gerald Bastard1, Frederic Teppe2, Lukas Worschech1, Victor Lopez-Richard4, and Sven Höfling1 — 1Lehrstuhl für Technische Physik, Julius-Maximilians-Universität Würzburg — 2L2C, CNRS-Université de Montpellier, France — 3IES, Université de Montpellier, France — 4Departamento de Fisica, Universidade Federal de Sao Carlos, Brazil
Quantum and neuromorphic computing rely on unconventional materials and device functionalities, yet achieving resilience to imperfections and reliable operation remains a major challenge. This has motivated growing interest in topological materials that provide robust and low-power operation while preserving coherence. However, integrating topological transport with memory functionality into a reconfigurable device has remained elusive. Here, we realize a topological field-effect memristor in which topological protection preserves edge state coherence, enabling the coexistence of coherent transport and non-volatile memory functionality. Utilizing inverted InAs/GaInSb/InAs trilayer quantum wells, we realize a quantum spin Hall insulator that exploits its intrinsic floating-gate behavior. This feature allows one to reconfigure the conventional field-effect transistor operation into memristive functionality with broad electric-field tunability. One resistance state is entirely governed by dissipationless, coherent transport.
Keywords: Topological Insulator; Memristor; Quantum Spin Hall Insulators