Dresden 2026 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 65: 2D materials: Stacking and heterostructures – Poster (joint session O/TT)

TT 65.1: Poster

Mittwoch, 11. März 2026, 18:00–20:00, P2

Unexpected Ordered Interfaces in WSe₂-MoSe₂ Lateral Interfaces Observed by STEM — •Matvei Kislitsyn¹, Max Bergmann¹, Julian Picker², Jürgen Belz¹, Robin Günkel¹, Badrosadat Ojaghi Dogahe¹, Shamail Ahmed¹, Andrey Turchanin², and Kerstin Volz¹ — ¹mar.quest | Marburg Center for Quantum Materials and Sustainable Technologies, Philipps-Universität Marburg, 35032 Marburg, Germany — ²Faculty of Chemistry and Earth Sciences, Friedrich-Schiller-Universität, 07743 Jena, Germany

Two-dimensional WSe₂-MoSe₂ lateral heterostructures offer a platform for engineering band alignment and excitonic behavior through atomic-scale control of composition, making this material attractive for use in 2D optoelectronic devices. In this contribution, we present a systematic scanning transmission electron microscopy (STEM) study of monolayer WSe₂-MoSe₂ heterostructures synthesized by chemical vapor deposition (CVD) directly on SiO₂ TEM grids. While some investigated 2D flakes show atomically sharp interfaces with minimal intermixing, we also observe a highly ordered and unexpected interface configuration consisting of alternating Mo and W atomic rows. By comparing experimental observations with STEM image simulations and theoretical predictions, we analyze the structural origins of both interface types and discuss the mechanisms that may give rise to this unusual ordering. These results provide insight into interface formation mechanisms in lateral transition-metal dichalcogenide heterostructures and their potential impact on material properties.

Keywords: 2D Heterostructure; Ordering; STEM; CVD; TMDCs